Method to determine radiative and non-radiative defects applied to AgInS2-ZnS luminescent nanocrystals

T. Chevallier 1 A. Benayad 1 G. Le Blevennec 2 F. Chandezon 3
1 LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux
2 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
3 SPRAM - UMR 5819 - Structures et propriétés d'architectures moléculaire
Abstract : The systematic measurement of the photoluminescence quantum yield and the recombination lifetime of a given phosphor allows for the quantification of both radiative and non-radiative recombination rates. This analysis therefore separates the two types of phenomena influencing the quantum efficiency of the phosphor. When associated with other materials characterizations, this powerful tool allows for the determination of the relationship between the structural properties and the efficiency of the photoluminescence process. This article presents this method and its direct application to emerging luminescent quaternary semiconductor nanocrystals. First, the direct effect of disorder on non-radiative recombination rate is demonstrated. Then, strong evidence concerning the nature of the donor and acceptor defects involved in the photoluminescence process of these materials are obtained using XPS.
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Journal articles
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Submitted on : Wednesday, July 31, 2019 - 4:35:12 PM
Last modification on : Friday, August 2, 2019 - 2:59:34 AM

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T. Chevallier, A. Benayad, G. Le Blevennec, F. Chandezon. Method to determine radiative and non-radiative defects applied to AgInS2-ZnS luminescent nanocrystals. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2017, 19 (3), pp.2368-2372. ⟨10.1039/c6cp06509k⟩. ⟨cea-02202445⟩

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