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Conformal isolation of high-aspect-ratio TSVs using a low-kappa dielectric deposited by filament-assisted CVD

Abstract : In this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400 degrees C (with or without UV-assist) is required to meet specifications in terms of dielectric properties (low-kappa values and good insulating properties). This work highlights FACVD as a promising technique to allow the deposition of conformal dielectric thin films within High-Aspect-Ratio TSVs. Step coverage higher than 70% were obtained within 10 * 80 mu m TSVs. Then, FACVD deposited SiOCH films can be considered as a promising candidate for use within TSV technologies.
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https://hal-cea.archives-ouvertes.fr/cea-02202437
Contributor : Marianne Leriche <>
Submitted on : Wednesday, July 31, 2019 - 4:34:54 PM
Last modification on : Thursday, June 11, 2020 - 5:04:09 PM

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V. Jousseaume, B. Altemus, C. Ribiere, S. Minoret, M. Gottardi, et al.. Conformal isolation of high-aspect-ratio TSVs using a low-kappa dielectric deposited by filament-assisted CVD. Microelectronic Engineering, Elsevier, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩. ⟨cea-02202437⟩

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