Conformal isolation of high-aspect-ratio TSVs using a low-kappa dielectric deposited by filament-assisted CVD

V. Jousseaume (1) , B. Altemus (2) , C. Ribiere (1) , S. Minoret (1) , M. Gottardi (1) , C. Ratin (1) , K. Ichiki (1, 2) , T. Mourier (1) , J. Faguet (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 TEL Technology Center, America, LLC

In this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400 degrees C (with or without UV-assist) is required to meet specifications in terms of dielectric properties (low-kappa values and good insulating properties). This work highlights FACVD as a promising technique to allow the deposition of conformal dielectric thin films within High-Aspect-Ratio TSVs. Step coverage higher than 70% were obtained within 10 * 80 mu m TSVs. Then, FACVD deposited SiOCH films can be considered as a promising candidate for use within TSV technologies.

Domaines: Sciences de l'ingénieur [physics]

V. Jousseaume, B. Altemus, C. Ribiere, S. Minoret, M. Gottardi, et al.. Conformal isolation of high-aspect-ratio TSVs using a low-kappa dielectric deposited by filament-assisted CVD. Microelectronic Engineering, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩. ⟨cea-02202437⟩