Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes

N. Simon (1) , H. Girard (1) , D. Ballutaud (2) , S. Ghodbane (3) , A. Deneuville (3) , M. Herlem (1) , A. Etcheberry (1)

1 ILV - Institut Lavoisier de Versailles
2 GEMAC - Groupe d'Etude de la Matière Condensée
3 LEPES - Laboratoire d'Etudes des Propriétés Electroniques des Solides

Domaines: Matériaux

N. Simon, H. Girard, D. Ballutaud, S. Ghodbane, A. Deneuville, et al.. Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes. Diamond and Related Materials, 2005, 14 (3-7), pp.1179-1182. ⟨10.1016/j.diamond.2004.12.013⟩. ⟨cea-02189583⟩