Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes

N. Simon; H. Girard; D. Ballutaud; S. Ghodbane; A. Deneuville; M. Herlem; A. Etcheberry

doi:10.1016/j.diamond.2004.12.013

Journal Articles Diamond and Related Materials Year : 2005

Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes

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N. Simon

Function : Author

Institut Lavoisier de Versailles

H. Girard

Function : Author

Institut Lavoisier de Versailles

D. Ballutaud

Function : Author

Groupe d'Etude de la Matière Condensée

S. Ghodbane

Function : Author

Laboratoire d'Etudes des Propriétés Electroniques des Solides

A. Deneuville

Function : Author

Laboratoire d'Etudes des Propriétés Electroniques des Solides

M. Herlem

Function : Author

Institut Lavoisier de Versailles

A. Etcheberry

Function : Author

Institut Lavoisier de Versailles

Domains

Chemical Sciences Material chemistry

Hugues Girard : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-02189583

Submitted on : Friday, July 19, 2019-5:00:07 PM

Last modification on : Tuesday, February 7, 2023-2:45:04 PM

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cea-02189583 , version 1 (19-07-2019)

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HAL Id : cea-02189583 , version 1
DOI : 10.1016/j.diamond.2004.12.013

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N. Simon, H. Girard, D. Ballutaud, S. Ghodbane, A. Deneuville, et al.. Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes. Diamond and Related Materials, 2005, 14 (3-7), pp.1179-1182. ⟨10.1016/j.diamond.2004.12.013⟩. ⟨cea-02189583⟩

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Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes

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