Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond

Hugues Girard; N. Simon; D. Ballutaud; E. de La Rochefoucauld; A. Etcheberry

doi:10.1016/j.diamond.2006.12.002

Journal Articles Diamond and Related Materials Year : 2007

Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond

(1) , (1) , (2) , (1) , (1)

1
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Hugues Girard

Function : Author
PersonId : 21475
IdHAL : hugues-girard
ORCID : 0000-0001-8491-0412
IdRef : 149944330

Institut Lavoisier de Versailles

CV

N. Simon

Function : Author

Institut Lavoisier de Versailles

D. Ballutaud

Function : Author

Groupe d'Etude de la Matière Condensée

E. de La Rochefoucauld

Function : Author

Institut Lavoisier de Versailles

A. Etcheberry

Function : Author

Institut Lavoisier de Versailles

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Material chemistry

Hugues Girard : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-02189573

Submitted on : Friday, July 19, 2019-4:53:25 PM

Last modification on : Friday, March 24, 2023-2:53:11 PM

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cea-02189573 , version 1 (19-07-2019)

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HAL Id : cea-02189573 , version 1
DOI : 10.1016/j.diamond.2006.12.002

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Hugues Girard, N. Simon, D. Ballutaud, E. de La Rochefoucauld, A. Etcheberry. Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond. Diamond and Related Materials, 2007, 16 (4-7), pp.888-891. ⟨10.1016/j.diamond.2006.12.002⟩. ⟨cea-02189573⟩

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Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond

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