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Journal articles
Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements
Hugues Girard 1
Author IdHAL : hugues-girard ORCID : https://orcid.org/0000-0001-8491-0412
E. de la Rochefoucauld 1
Author
D. Ballutaud 2
Author
A. Etcheberry 1
Author
N. Simon 1
Author
1
ILV - Institut Lavoisier de Versailles (Bâtiment Lavoisier
45 avenue des Etats Unis
78035 VERSAILLES CEDEX - France)
- UVSQ - Université de Versailles Saint-Quentin-en-Yvelines : UMR8180 (55 avenue de Paris - 78035 Versailles cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8180 (France)
2
GEMAC - Groupe d'Etude de la Matière Condensée (URF de Sciences
Bâtiment Fermat
45 avenue des Etats Unis
78035 Versailles - France)
- UVSQ - Université de Versailles Saint-Quentin-en-Yvelines : UMR8635 (55 avenue de Paris - 78035 Versailles cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8635 (France)
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Journal articles
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https://hal-cea.archives-ouvertes.fr/cea-02189572
Contributor : Hugues Girard Connect in order to contact the contributor
Submitted on : Friday, July 19, 2019 - 4:52:29 PM
Last modification on : Wednesday, October 20, 2021 - 12:24:13 AM
Contributor : Hugues Girard Connect in order to contact the contributor
Submitted on : Friday, July 19, 2019 - 4:52:29 PM
Last modification on : Wednesday, October 20, 2021 - 12:24:13 AM
Identifiers
- HAL Id : cea-02189572, version 1
- DOI : 10.1149/1.2743824
Citation
Hugues Girard, E. de la Rochefoucauld, D. Ballutaud, A. Etcheberry, N. Simon. Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements. Electrochemical and Solid-State Letters, Electrochemical Society, 2007, 10 (8), pp.F34. ⟨10.1149/1.2743824⟩. ⟨cea-02189572⟩
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