Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements

Hugues Girard; E. de La Rochefoucauld; D. Ballutaud; A. Etcheberry; N. Simon

doi:10.1149/1.2743824

Journal Articles Electrochemical and Solid-State Letters Year : 2007

Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements

(1) , (1) , (2) , (1) , (1)

1
2

Hugues Girard

Function : Author
PersonId : 21475
IdHAL : hugues-girard
ORCID : 0000-0001-8491-0412
IdRef : 149944330

Institut Lavoisier de Versailles

CV

E. de La Rochefoucauld

Function : Author

Institut Lavoisier de Versailles

D. Ballutaud

Function : Author

Groupe d'Etude de la Matière Condensée

A. Etcheberry

Function : Author

Institut Lavoisier de Versailles

N. Simon

Function : Author

Institut Lavoisier de Versailles

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Material chemistry

Hugues Girard : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-02189572

Submitted on : Friday, July 19, 2019-4:52:29 PM

Last modification on : Friday, June 2, 2023-3:14:40 PM

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cea-02189572 , version 1 (19-07-2019)

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HAL Id : cea-02189572 , version 1
DOI : 10.1149/1.2743824

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Hugues Girard, E. de La Rochefoucauld, D. Ballutaud, A. Etcheberry, N. Simon. Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements. Electrochemical and Solid-State Letters, 2007, 10 (8), pp.F34. ⟨10.1149/1.2743824⟩. ⟨cea-02189572⟩

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Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements

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