Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing

N. Simon; Hugues Girard; M. Manesse; D. Ballutaud; A. Etcheberry

doi:10.1016/j.diamond.2008.03.003

Journal Articles Diamond and Related Materials Year : 2008

Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing

(1) , (1) , (1) , (2) , (1)

1
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N. Simon

Function : Author

Institut Lavoisier de Versailles

Hugues Girard

Function : Author
PersonId : 21475
IdHAL : hugues-girard
ORCID : 0000-0001-8491-0412
IdRef : 149944330

Institut Lavoisier de Versailles

CV

M. Manesse

Function : Author

Institut Lavoisier de Versailles

D. Ballutaud

Function : Author

Groupe d'Etude de la Matière Condensée

A. Etcheberry

Function : Author

Institut Lavoisier de Versailles

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Material chemistry

Hugues Girard : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-02189565

Submitted on : Friday, July 19, 2019-4:47:51 PM

Last modification on : Friday, June 2, 2023-3:14:40 PM

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cea-02189565 , version 1 (19-07-2019)

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HAL Id : cea-02189565 , version 1
DOI : 10.1016/j.diamond.2008.03.003

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N. Simon, Hugues Girard, M. Manesse, D. Ballutaud, A. Etcheberry. Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing. Diamond and Related Materials, 2008, 17 (7-10), pp.1371-1375. ⟨10.1016/j.diamond.2008.03.003⟩. ⟨cea-02189565⟩

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Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing

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