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Journal articles
Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing
N. Simon 1
Author
Hugues Girard 1
Author IdHAL : hugues-girard ORCID : https://orcid.org/0000-0001-8491-0412
M. Manesse 1
Author
D. Ballutaud 2
Author
A. Etcheberry 1
Author
1
ILV - Institut Lavoisier de Versailles (Bâtiment Lavoisier
45 avenue des Etats Unis
78035 VERSAILLES CEDEX - France)
- UVSQ - Université de Versailles Saint-Quentin-en-Yvelines : UMR8180 (55 avenue de Paris - 78035 Versailles cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8180 (France)
2
GEMAC - Groupe d'Etude de la Matière Condensée (URF de Sciences
Bâtiment Fermat
45 avenue des Etats Unis
78035 Versailles - France)
- UVSQ - Université de Versailles Saint-Quentin-en-Yvelines : UMR8635 (55 avenue de Paris - 78035 Versailles cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8635 (France)
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Journal articles
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https://hal-cea.archives-ouvertes.fr/cea-02189565
Contributor : Hugues Girard <>
Submitted on : Friday, July 19, 2019 - 4:47:51 PM
Last modification on : Monday, March 30, 2020 - 2:56:03 PM
Contributor : Hugues Girard <>
Submitted on : Friday, July 19, 2019 - 4:47:51 PM
Last modification on : Monday, March 30, 2020 - 2:56:03 PM
Identifiers
- HAL Id : cea-02189565, version 1
- DOI : 10.1016/j.diamond.2008.03.003
Citation
N. Simon, Hugues Girard, M. Manesse, D. Ballutaud, A. Etcheberry. Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing. Diamond and Related Materials, Elsevier, 2008, 17 (7-10), pp.1371-1375. ⟨10.1016/j.diamond.2008.03.003⟩. ⟨cea-02189565⟩
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