Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes

Hugues Girard; Nathalie Simon; Dominique Ballutaud; Arnaud Etcheberry

doi:10.1016/j.crci.2008.01.014

Journal Articles Comptes Rendus. Chimie Year : 2008

Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes

(1) , (1) , (2) , (1)

1
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Hugues Girard

Function : Author
PersonId : 21475
IdHAL : hugues-girard
ORCID : 0000-0001-8491-0412
IdRef : 149944330

Institut Lavoisier de Versailles

CV

Nathalie Simon

Function : Author

Institut Lavoisier de Versailles

Dominique Ballutaud

Function : Author

Groupe d'Etude de la Matière Condensée

Arnaud Etcheberry

Function : Author
PersonId : 756688
ORCID : 0000-0003-3515-9866

Institut Lavoisier de Versailles

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Material chemistry

Hugues Girard : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-02189562

Submitted on : Friday, July 19, 2019-4:44:37 PM

Last modification on : Friday, June 2, 2023-3:14:40 PM

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cea-02189562 , version 1 (19-07-2019)

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HAL Id : cea-02189562 , version 1
DOI : 10.1016/j.crci.2008.01.014

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Hugues Girard, Nathalie Simon, Dominique Ballutaud, Arnaud Etcheberry. Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes. Comptes Rendus. Chimie, 2008, 11 (9), pp.1010-1015. ⟨10.1016/j.crci.2008.01.014⟩. ⟨cea-02189562⟩

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Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes

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