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Journal Articles Science Advances Year : 2018

## Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor

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Joost van Der Heijden
• Function : Author
Takashi Kobayashi
• Function : Author
Matthew House
• Function : Author
Joe Salfi
• Function : Author
Michelle Simmons
• Function : Author
Sven Rogge
• Function : Correspondent author
• PersonId : 1051028

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#### Abstract

Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long distances. Electron spins in silicon offer long lifetimes, but their weak spin-orbit interaction makes electrical coupling challenging. Hole spins bound to acceptor dopants, spin-orbit–coupled J = 3/2 systems similar to Si vacancies in SiC and single Co dopants, are an electrically active spin system in silicon. However, J = 3/2 systems are much less studied than S = 1/2 electrons, and spin readout has not yet been demonstrated for acceptors in silicon. Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify m$_J$ = ±1/2 and m$_J$ = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the J = 3/2 energy spectrum. We find regimes of spin-like (+3/2 to −3/2) and charge-like (±1/2 to ±3/2) relaxations, separated by a regime of enhanced relaxation induced by mixing of light and heavy holes. The demonstrated control over the energy level ordering and hybridization are new tools in the J = 3/2 system that are crucial to optimize single-atom spin lifetime and electrical coupling.

#### Domains

Engineering Sciences [physics]

### Dates and versions

cea-02189155 , version 1 (19-07-2019)

### Licence

Attribution - CC BY 4.0

### Identifiers

• HAL Id : cea-02189155 , version 1
• DOI :
• PUBMEDCENTRAL :

### Cite

Joost van Der Heijden, Takashi Kobayashi, Matthew House, Joe Salfi, Sylvain Barraud, et al.. Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor. Science Advances , 2018, 4 (12), pp.eaat9199. ⟨10.1126/sciadv.aat9199⟩. ⟨cea-02189155⟩

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