Abstract : Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long distances. Electron spins in silicon offer long lifetimes, but their weak spin-orbit interaction makes electrical coupling challenging. Hole spins bound to acceptor dopants, spin-orbit–coupled J = 3/2 systems similar to Si vacancies in SiC and single Co dopants, are an electrically active spin system in silicon. However, J = 3/2 systems are much less studied than S = 1/2 electrons, and spin readout has not yet been demonstrated for acceptors in silicon. Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify m$_J$ = ±1/2 and m$_J$ = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the J = 3/2 energy spectrum. We find regimes of spin-like (+3/2 to −3/2) and charge-like (±1/2 to ±3/2) relaxations, separated by a regime of enhanced relaxation induced by mixing of light and heavy holes. The demonstrated control over the energy level ordering and hybridization are new tools in the J = 3/2 system that are crucial to optimize single-atom spin lifetime and electrical coupling.
https://hal-cea.archives-ouvertes.fr/cea-02189155
Contributor : Bruno Savelli
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Submitted on : Friday, July 19, 2019 - 10:22:37 AM
Last modification on : Saturday, July 20, 2019 - 1:25:34 AM
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Distributed under a Creative Commons Attribution 4.0 International License
Joost van der Heijden, Takashi Kobayashi, Matthew House, Joe Salfi, Sylvain Barraud, et al.. Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor. Science Advances , American Association for the Advancement of Science (AAAS), 2018, 4 (12), pp.eaat9199. ⟨10.1126/sciadv.aat9199⟩. ⟨cea-02189155⟩
