G. W. Burr, Recent Progress in Phase-Change Memory Technology, IEEE J. Emerging Sel. Top. Circuits Syst, vol.6, issue.2, pp.146-162, 2016.

C. Pigot, Comprehensive phase-change memory compact model for circuit simulation, IEEE Trans. Electron Devices
URL : https://hal.archives-ouvertes.fr/hal-01869957

R. Annunziata, Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond, IEEE International Electron Devices Meeting, pp.1-4, 2009.

D. Ventrice, P. Fantini, A. Redaelli, A. Pirovano, A. Benvenuti et al., A Phase Change Memory Compact Model for Multilevel Applications, IEEE Electron Device Lett, vol.28, issue.11, pp.973-975, 2007.

J. A. Becker, C. B. Green, and G. L. Pearson, Properties and Uses of Thermistors -Thermally Sensitive Resistors, Trans. Am. Inst. Electr. Eng, vol.65, issue.11, pp.711-725, 1946.

Y. H. Shih, Understanding amorphous states of phase-change memory using frenkel-poole model, IEEE International Electron Devices Meeting -Technical Digest, vol.3, pp.753-756, 2009.

R. M. Hill, Poole-Frenkel conduction in amorphous solids, Philos. Mag, vol.23, issue.181, pp.59-86, 1971.

C. Pigot, F. Gilibert, M. Reyboz, M. Bocquet, P. Zuliani et al., Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching, Jpn. J. Appl. Phys, vol.57, issue.4S, pp.4-13, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01737915

M. L. Gallo, A. Athmanathan, D. Krebs, and A. Sebastian, Evidence for thermally assisted threshold switching behavior in nanoscale phasechange memory cells, J. Appl. Phys, vol.119, issue.2, p.25704, 2016.

G. Marcolini, Modeling the dynamic self-heating of PCM, European Solid-State Device Research Conference, pp.346-349, 2013.

E. Covi, A. Kiouseloglou, A. Cabrini, and G. Torelli, Compact model for phase change memory cells, Conference on Ph.D. Research in Microelectronics and Electronics, pp.1-4, 2014.

K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya et al., A compact model of phase-change memory based on rate equations of crystallization and amorphization, IEEE Trans. Electron Devices, vol.55, issue.7, pp.1672-1681, 2008.

N. Ciocchini, M. Cassinerio, D. Fugazza, and D. Ielmini, Evidence for non-arrhenius kinetics of crystallization in phase change memory devices, IEEE Trans. Electron Devices, vol.60, issue.11, pp.3767-3774, 2013.