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Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays

Alessandro Grossi 1 Cristian Zambelli 1 Piero Olivo 1 Etienne Nowak 2 Gabriel Molas 2 Jean Francois Nodin 2 Luca Perniola 3
1 UniFE - Università degli Studi di Ferrara
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
Abstract : In this letter, the fundamental variability limits of filament-based OxRRAM are investigated considering different transistor sizes and metal–insulator–metal (MIM) stacks featuring different materials and thicknesses. Cellto-cell variability is analyzed through an extensive characterization of Forming, Set, and Reset operations on 4-kb OxRRAM arrays. The results obtained in terms of switching voltage variability and resistance variability from cell-to-cell are compared and discussed to identify the variability limiting component as a function of the conduction regime and to understand the impact of transistor MIM stack parameters on variability and performances.
Keywords : OxRRAM HfO$_2$ variability QPC model
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Journal articles
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Submitted on : Thursday, July 18, 2019 - 11:07:32 AM
Last modification on : Thursday, June 11, 2020 - 5:04:09 PM

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Alessandro Grossi, Cristian Zambelli, Piero Olivo, Etienne Nowak, Gabriel Molas, et al.. Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2018, 39, pp.27-30. ⟨10.1109/LED.2017.2774604⟩. ⟨cea-02187976⟩

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