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Journal Articles IEEE Electron Device Letters Year : 2018

Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays

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Abstract

In this letter, the fundamental variability limits of filament-based OxRRAM are investigated considering different transistor sizes and metal–insulator–metal (MIM) stacks featuring different materials and thicknesses. Cellto-cell variability is analyzed through an extensive characterization of Forming, Set, and Reset operations on 4-kb OxRRAM arrays. The results obtained in terms of switching voltage variability and resistance variability from cell-to-cell are compared and discussed to identify the variability limiting component as a function of the conduction regime and to understand the impact of transistor MIM stack parameters on variability and performances.

Dates and versions

cea-02187976 , version 1 (18-07-2019)

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Alessandro Grossi, Cristian Zambelli, Piero Olivo, Etienne Nowak, Gabriel Molas, et al.. Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays. IEEE Electron Device Letters, 2018, 39, pp.27-30. ⟨10.1109/LED.2017.2774604⟩. ⟨cea-02187976⟩
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