Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays

Alessandro Grossi (1) , Cristian Zambelli (1) , Piero Olivo (1) , Etienne Nowak (2) , Gabriel Molas (2) , Jean Francois Nodin (2) , Luca Perniola (3)

1 UniFE - Università degli Studi di Ferrara = University of Ferrara
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 CEA - Commissariat à l'énergie atomique et aux énergies alternatives

In this letter, the fundamental variability limits of filament-based OxRRAM are investigated considering different transistor sizes and metal–insulator–metal (MIM) stacks featuring different materials and thicknesses. Cellto-cell variability is analyzed through an extensive characterization of Forming, Set, and Reset operations on 4-kb OxRRAM arrays. The results obtained in terms of switching voltage variability and resistance variability from cell-to-cell are compared and discussed to identify the variability limiting component as a function of the conduction regime and to understand the impact of transistor MIM stack parameters on variability and performances.

Keywords: OxRRAM; HfO$_2$; variability; QPC model

Domains: Engineering Sciences [physics]

Alessandro Grossi, Cristian Zambelli, Piero Olivo, Etienne Nowak, Gabriel Molas, et al.. Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays. IEEE Electron Device Letters, 2018, 39, pp.27-30. ⟨10.1109/LED.2017.2774604⟩. ⟨cea-02187976⟩