Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

J. Biscarrat (1) , R. Gwoziecki (1) , Y. Baines (1) , J. Buckley (1) , C. Gillot (1) , W. Vandendaele (1) , G. Garnier (1) , M. Charles (1) , M. Plissonnier (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We present significant performance enhancements of AlGaN/GaN power Schottky diodes on 200 mm silicon substrates achieved by optimizing the anode fabrication and the epitaxial layers. 600V rated AlGaN/GaN power diodes using a MIS (Metal Insulator Semiconductor)-gated Schottky anode were processed using a CMOS compatible process flow transferable to mass production environments. Turn-on voltages V$_T$ around 0.6 V at 25°C, forward voltages V$_F$ lower than 1.6 V at 100 mA/mm and 25°C, reverse leakage currents IREV lower than 1 $\mu$A/mm at 600 V and 150°C and excellent dynamic performances were achieved and outperform state of the art 600V rated AlGaN/GaN Schottky diodes.

Keywords: III-V semiconductor materials; Aluminum gallium nitride; Schottky diodes; HEMTs; Heterostructures

Domains: Engineering Sciences [physics]

J. Biscarrat, R. Gwoziecki, Y. Baines, J. Buckley, C. Gillot, et al.. Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2018, Chicago, United States. pp.200-203, ⟨10.1109/ISPSD.2018.8393637⟩. ⟨cea-02187888⟩