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Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

J. Biscarrat 1, * R. Gwoziecki 1 Y. Baines 1 J. Buckley 1 C. Gillot 1 W. Vandendaele 1 G. Garnier 1 M. Charles 1 M. Plissonnier 1
* Corresponding author
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
Abstract : We present significant performance enhancements of AlGaN/GaN power Schottky diodes on 200 mm silicon substrates achieved by optimizing the anode fabrication and the epitaxial layers. 600V rated AlGaN/GaN power diodes using a MIS (Metal Insulator Semiconductor)-gated Schottky anode were processed using a CMOS compatible process flow transferable to mass production environments. Turn-on voltages V$_T$ around 0.6 V at 25°C, forward voltages V$_F$ lower than 1.6 V at 100 mA/mm and 25°C, reverse leakage currents IREV lower than 1 $\mu$A/mm at 600 V and 150°C and excellent dynamic performances were achieved and outperform state of the art 600V rated AlGaN/GaN Schottky diodes.
Keywords : III-V semiconductor materials Aluminum gallium nitride Schottky diodes HEMTs Heterostructures
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-02187888
Contributor : Bruno Savelli <>
Submitted on : Thursday, July 18, 2019 - 10:45:48 AM
Last modification on : Thursday, June 11, 2020 - 5:04:09 PM

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J. Biscarrat, R. Gwoziecki, Y. Baines, J. Buckley, C. Gillot, et al.. Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2018, Chicago, United States. pp.200-203, ⟨10.1109/ISPSD.2018.8393637⟩. ⟨cea-02187888⟩

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