Skip to Main content Skip to Navigation
Journal articles

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Si

Céline Vergnaud 1 Maxime Gay 2 Carlos Alvarez 3 Minh-Tuan Dau 1 Francois Pierre 2 Denis Jalabert 4, 3 Christophe Licitra 2 Alain Marty 1 Cyrille Beigne 1 Benjamin Grevin 5 Olivier Renault 2 Hanako Okuno 4 Matthieu Jamet 6
1 SPINTEC [2002-2019] - SPINtronique et TEchnologie des Composants [2002-2019]
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 MEM - Modélisation et Exploration des Matériaux
4 LEMMA [?-2019] - Laboratoire d'Etude des Matériaux par Microscopie Avancée [?-2019]
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
5 SYMMES - SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé
6 STEP [2017-2019] - Synthèse, Structure et Propriétés de Matériaux Fonctionnels [2017-2019]
SYMMES - SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé : DRF/IRIG/SYMMES
Abstract : Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe2 mono-and multi-layers on SiO2/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO2/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe2 monolayers over 1 cm(2). To grow MoSe2 multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe2 monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe2 multilayers over 1 cm(2). Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10% of Mn in MoSe2 bilayers.
Keywords : solid phase epitaxy transition metal dichalcogenides large-scale growth van der Waals epitaxy structural properties electronic properties manganese doping
Document type :
Journal articles
Complete list of metadatas
https://hal-cea.archives-ouvertes.fr/cea-02186459
Contributor : Marianne Leriche <>
Submitted on : Wednesday, July 17, 2019 - 12:21:48 PM
Last modification on : Monday, July 20, 2020 - 2:32:04 PM

Links full text

arxiv

Identifiers

Collections

CEA | INAC-SP2M | INAC-SPINTEC | CNRS | DRT | CEA-DRF | LETI | IRIG | UGA | CEA-GRE

Citation

Céline Vergnaud, Maxime Gay, Carlos Alvarez, Minh-Tuan Dau, Francois Pierre, et al.. Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Si. 2D Materials, IOP Publishing, 2019, 6 (3), pp.035019. ⟨10.1088/2053-1583/ab10f4⟩. ⟨cea-02186459⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

311

Contact

Informations

CCSD