Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers - Archive ouverte HAL Access content directly
Journal Articles ECS Journal of Solid State Science and Technology Year : 2019

Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

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J. Aubin
  • Function : Author

Abstract

Ultraviolet Nanosecond Laser Annealing (UV-NLA) was performed on 30 nm-thick Si0.8Ge0.2 epitaxial layers. The various regimes encountered, depending on the melt depth after single pulse UV-NLA, are described and discussed in this paper. Energy densities around 2.00 J/cm(2) and above led to the formation of pseudomorphic layers with a strong Ge redistribution. Starting from uniform Si0.8Ge0.2 layers, Ge segregation toward the surface resulted in the formation of a Ge-rich surface layer with up to 55 at.% Ge for 2.00 J/cm(2). Such pseudomorphic SiGe layers with a graded composition and a Ge-rich surface may find promising applications such as contact resistance lowering in doped layers.
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Dates and versions

cea-02186445 , version 1 (17-07-2019)

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Cite

Léa Dagault, P. Acosta-Alba, S. Kerdiles, J. P. Barnes, J. M. Hartmann, et al.. Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers. ECS Journal of Solid State Science and Technology, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩. ⟨cea-02186445⟩
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