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25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures

Abstract : Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon (Si-Ge-Si) junction operating under low reverse bias at 1.55 mu m. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of similar to 9 GHz at -1 V and similar to 30 GHz at -3 V, with a leakage dark current as low as similar to 150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10(-9) is achieved for conventional 10 Gbps, 20 Gbps, and 25 Gbps data rates, yielding optical power sensitivities of -13.85 dBm, -12.70 dBm, and -11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.
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https://hal-cea.archives-ouvertes.fr/cea-02186443
Contributor : Marianne Leriche <>
Submitted on : Wednesday, July 17, 2019 - 12:21:18 PM
Last modification on : Wednesday, September 16, 2020 - 5:51:39 PM

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Daniel Benedikovic, Leopold Virot, Guy Aubin, Farah Amar, Bertrand Szelag, et al.. 25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures. Photonics Research, OSA Publishing, 2019, 7 (4), pp.437-444. ⟨10.1364/PRJ.7.000437⟩. ⟨cea-02186443⟩

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