25 Gbps low-voltage hetero-structured silicon- germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures
Résumé
Near-infrared (near-IR) Germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator (SOI) substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the high-data-rate performance pin waveguide photodetectors made of lateral hetero-structured Silicon-Germanium-Silicon (Si-Ge-Si) junction operating under low reverse bias at 1.55 µm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of ~9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark-current as low as ~150 nA, allowing a superior signal detection of high-speed data traffics. A bit-error-rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps and 25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next generation nanophotonics integrated circuits.
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09J_Benedikovic et al. - 2019 - OSA Photonics Research.pdf (3.23 Mo)
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