Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

Joel Kanyandekwe (1) , Yannick Baines (1) , Jerome Richy (1) , Sylvie Favier (1) , Charles Leroux (1) , Denis Blachier (1) , Yann Mazel (1) , Marc Veillerot (1) , Jean-Paul Barnes (1) , Mrad Mrad (1) , Cindy Wiese (1) , Matthew Charles (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In this work we have studied the growth of AlN barriers on GaN channels by Metal-Organic Vapor Phase Epitaxy (MOVPE). We have shown that an SiN in-situ capping layer is critical on AlN barrier layers. In addition, we have shown that an extreme reduction of NH3 partial pressure results in gallium incorporation into the layers around 22%. However, we have shown that lesser reductions of NH3 partial pressure allow us to achieve thin (3 nm) AlN layers capped with SiN which have a high quality crack free surface and state of the art Rsheet values < 330 Ohm/sq for such thin layers.

Keywords: MOVPE; AlN; SiN; Rsheet; GaN

Domains: Engineering Sciences [physics]

Joel Kanyandekwe, Yannick Baines, Jerome Richy, Sylvie Favier, Charles Leroux, et al.. Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer. Journal of Crystal Growth, 2019, 515, pp.48-52. ⟨10.1016/j.jcrysgro.2019.03.007⟩. ⟨cea-02186437⟩