In-situ X-ray diffraction on functional thin films using a laboratory source during electrical biasing

Abstract : Amethodology that allows the quantification of structural changes in functional thin films during the application of external electrical field is reported. The originality of this method is the development of a set-up using a laboratory X-ray source since most of previous Operando studies have used synchrotron radiations. Several technical challenges have been addressed the (i) optimization of the electrical contact and the sample geometry within the lab-source goniometers, (ii) evaluation of any X-ray dose effect on the Metal/Insulator/Metal structure to prevent eventual charge accumulation at the electrode interfaces and (iii) the quantification of the effect of the time-delay, needed for X-ray measurement, on domain switching. The validity of our method has been demonstrated on a prototypic sol-gel lead zirconate titanate (PZT) thin film where the polarization and structural changes have been simultaneously measured. The evolution of ferroelastic domains as a function of external electric field has been quantified and two different effects have been successfully separated (a) the cell extension and (b) domain wall motion described as the switching between a and c tetragonal domains.