X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories

Abstract : We evaluate the ability of the combination of grazing-incidence X-ray fluorescence (GIXRF) with X-ray reflectometry (XRR) to probe the impact of variations in the deposition process of tantalum oxide on the chemical depth-profiles of Ta2O5/metal structure, titanium nitride and nickel being investigated as bottom electrode material as they are good candidates for the replacement of noble materials by low-cost fab-friendly abundant electrodes for Resistive RAM. TOF-SIMS and GIXRF/XRR both unambiguously demonstrate the significant TiN-Ta intermixing in Ta2O5/TiN stacks, even with optimized Ta2O5 process conditions. On the contrary, TOF-SIMS profiles reveal that the introduction of H* plasma step in PE-ALD Ta2O5 process drastically reduces both the oxidation of nickel electrode material and the Ta2O5/Ni intermixing, therefore confirming that nickel is a good candidate for Ta2O5 based ReRAM. The influence of H* plasma on nickel-based samples was also evidenced by GIXRF/XRR technique, first qualitatively, then quantitatively by the use of model-based multilayer combined analysis, therefore demonstrating the performances of GIXRF/XRR as highly-sensitive, non-destructive chemical depth-profile technique suitable to support process development, either in lab or even in fabs.
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https://hal-cea.archives-ouvertes.fr/cea-02186190
Contributor : Marianne Leriche <>
Submitted on : Wednesday, July 17, 2019 - 10:43:09 AM
Last modification on : Friday, July 19, 2019 - 1:31:02 AM

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E. Nolot, B. Caby, R. Gassilloud, M. Veillerot, D. Eichert. X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories. Spectrochimica Acta Part B: Atomic Spectroscopy, Elsevier, 2018, 149, pp.71-75. ⟨10.1016/j.sab.2018.07.017⟩. ⟨cea-02186190⟩

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