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High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Abstract : It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 mu m/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of mu m observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 mu m for the highest growth rates up to 100 mu m for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 mu m/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.
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Contributor : Marianne Leriche Connect in order to contact the contributor
Submitted on : Wednesday, July 17, 2019 - 10:14:51 AM
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M. Charles, Y. Baines, A. Bavard, R. Bouveyron. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors. Journal of Crystal Growth, Elsevier, 2018, 483, pp.89-93. ⟨10.1016/j.jcrysgro.2017.11.004⟩. ⟨cea-02186138⟩



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