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Phase-Change Memory: Performance, Roles and Challenges

Abstract : In this paper we analyze recent progress in Phase-Change Memory (PCM) technology targeting both Storage Class Memory and embedded applications. The challenge to achieve a high temperature data retention without compromising the device programming speed can be addressed by material engineering. We show that volume and thermal confinement improvement of the phase-change material enables a high (10-fold) reduction of the programming current, achieved also by the optimization of the device architecture, in particular in the case of a confined structure. It leads to a higher cell efficiency proven by a 6x reduction of the programming current density wrt a standard PCM structure. Furthermore, we demonstrate the reduction of thermal losses by the tuning of the thermal conductivity of the dielectrics surrounding the phase-change material. Finally, we propose some considerations about the PCM ultimate scaling and the reliability at such dimensions, showing that the engineering of the bottom electrode/phase-change material interface can lead to a reduced variability in scaled devices.
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Submitted on : Tuesday, July 16, 2019 - 4:03:29 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM


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  • HAL Id : cea-02185419, version 1



G. Navarro, G. Bourgeois, J. Kluge, A. L. Serra, A. Verdy, et al.. Phase-Change Memory: Performance, Roles and Challenges. 2018 IEEE International Memory Workshop (IMW), May 2018, Kyoto, Japan. ⟨cea-02185419⟩



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