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Fine electron biprism on a Si-on-insulator chip for off-axis electron holography

Martial Duchamp 1, 2 Olivier Girard 3 Giulio Pozzi 4, 2 Helmut Soltner 5 Florian Winkler 2 Rolf Speen 2 Rafal Dunin-Borkowski 2 David Cooper 3
1 Nanyang Technological University [Singapour]
2 Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons - Peter Grünberg Institute
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 University of Bologna
5 Central Institute for Engineering, Electronics and Analytics (ZEA)
Abstract : Off-axis electron holography allows both the amplitude and the phase shift of an electron wavefield propagating through a specimen in a transmission electron microscope to be recovered. The technique requires the use of an electron biprism to deflect an object wave and a reference wave to form an interference pattern. Here, we introduce an approach based on semiconductor processing technology to fabricate fine electron biprisms with rectangular cross-sections. By performing electrostatic calculations and preliminary experiments, we demonstrate that such biprisms promise improved performance for electron holography experiments.
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Contributor : Marianne Leriche <>
Submitted on : Tuesday, July 16, 2019 - 3:59:43 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM

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Martial Duchamp, Olivier Girard, Giulio Pozzi, Helmut Soltner, Florian Winkler, et al.. Fine electron biprism on a Si-on-insulator chip for off-axis electron holography. Ultramicroscopy, Elsevier, 2018, 185, pp.81-89. ⟨10.1016/j.ultramic.2017.11.012⟩. ⟨cea-02185407⟩

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