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Journal Articles ACS Nano Year : 2018

Electronic Properties of Transferable Atomically Thin MoSe 2 /h-BN Heterostructures Grown on Rh(111)

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Abstract

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy (kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level (EF), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe2, are well preserved in MoSe2/h-BN heterostructures.

Dates and versions

cea-02185390 , version 1 (16-07-2019)

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Ming-Wei Chen, Hokwon Kim, Carlo Bernard, Michele Pizzochero, Javier Zaldívar, et al.. Electronic Properties of Transferable Atomically Thin MoSe 2 /h-BN Heterostructures Grown on Rh(111). ACS Nano, 2018, 12 (11), pp.11161-11168. ⟨10.1021/acsnano.8b05628⟩. ⟨cea-02185390⟩
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