High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb based OTS Selector Devices

A. Verdy 1 G. Navarro 1 M. Bernard 1 P. Noé 1 C. Licitra 1 G. Bourgeois 1 J. Garrione 1 M.C. Cyrille 1 V. Sousa 1 E. Nowak 1
1 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
Abstract : In this paper, we investigate the stability at high temperature of N-doped Ge-Se-Sb based Ovonic Threshold Switching selectors (OTS). Annealing temperatures up to 400°C are explored, compatible with IC Back-End-Of-Line temperature budget (BEOL). Thanks to electrical characterization and material physico-chemical analysis, we show how an annealing of 30 minutes at 400°C is beneficial for the reduction of the threshold voltage. Moreover, after such thermal budget, an ultra-low leakage current of 0.1 nA at V$_{th}$/2 and an endurance of more than 10$^8$ cycles are still ensured. Electrical parameters and selector performance are then analyzed at stress temperatures up to 150°C, demonstrating the suitability of Ge-Se-Sb based OTS selector devices for BEOL integrations for applications targeting high temperature operating environments.
Keywords : Index Terms-OTS BEOL selector thermal stability N-doped Ge-Se-Sb high temperature
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A. Verdy, G. Navarro, M. Bernard, P. Noé, C. Licitra, et al.. High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb based OTS Selector Devices. 2018 IEEE International Memory Workshop (IMW), May 2018, Kyoto, Japan. pp.1-4, ⟨10.1109/IMW.2018.8388834⟩. ⟨cea-02185375⟩

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