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Conference papers
High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb based OTS Selector Devices
Abstract : In this paper, we investigate the stability at high temperature of N-doped Ge-Se-Sb based Ovonic Threshold Switching selectors (OTS). Annealing temperatures up to 400°C are explored, compatible with IC Back-End-Of-Line temperature budget (BEOL). Thanks to electrical characterization and material physico-chemical analysis, we show how an annealing of 30 minutes at 400°C is beneficial for the reduction of the threshold voltage. Moreover, after such thermal budget, an ultra-low leakage current of 0.1 nA at V$_{th}$/2 and an endurance of more than 10$^8$ cycles are still ensured. Electrical parameters and selector performance are then analyzed at stress temperatures up to 150°C, demonstrating the suitability of Ge-Se-Sb based OTS selector devices for BEOL integrations for applications targeting high temperature operating environments.
Cited literature [15 references]
https://hal-cea.archives-ouvertes.fr/cea-02185375
Contributor : Bruno Savelli Connect in order to contact the contributor
Submitted on : Tuesday, July 16, 2019 - 3:46:27 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
Contributor : Bruno Savelli Connect in order to contact the contributor
Submitted on : Tuesday, July 16, 2019 - 3:46:27 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
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