High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb based OTS Selector Devices

A. Verdy (1) , G. Navarro (1) , M. Bernard (1) , P. Noé (1) , C. Licitra (1) , G. Bourgeois (1) , J. Garrione (1) , M.C. Cyrille (1) , V. Sousa (1) , E. Nowak (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In this paper, we investigate the stability at high temperature of N-doped Ge-Se-Sb based Ovonic Threshold Switching selectors (OTS). Annealing temperatures up to 400°C are explored, compatible with IC Back-End-Of-Line temperature budget (BEOL). Thanks to electrical characterization and material physico-chemical analysis, we show how an annealing of 30 minutes at 400°C is beneficial for the reduction of the threshold voltage. Moreover, after such thermal budget, an ultra-low leakage current of 0.1 nA at V$_{th}$/2 and an endurance of more than 10$^8$ cycles are still ensured. Electrical parameters and selector performance are then analyzed at stress temperatures up to 150°C, demonstrating the suitability of Ge-Se-Sb based OTS selector devices for BEOL integrations for applications targeting high temperature operating environments.

Keywords: Index Terms-OTS; BEOL selector; thermal stability; N-doped Ge-Se-Sb; high temperature

Domains: Engineering Sciences [physics]; Materials

A. Verdy, G. Navarro, M. Bernard, P. Noé, C. Licitra, et al.. High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb based OTS Selector Devices. 2018 IEEE International Memory Workshop (IMW), May 2018, Kyoto, Japan. pp.1-4, ⟨10.1109/IMW.2018.8388834⟩. ⟨cea-02185375⟩