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1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy

A. Jouve 1 V. Balan 1 N. Bresson C. Euvrard-Colnat 1 F. Fournel 1 Y. Exbrayat 1 G. Mauguen 1 M. Abdel Sater 1 C. Beitia 1 L. Arnaud 1 S. Cheramy 1 S. Lhostis 2 A. Farcy 2 S. Guillaumet 2 S. Mermoz 2
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 ST-CROLLES - STMicroelectronics [Crolles]
Abstract : Copper/oxide hybrid bonding process has been extensively studied these past years as a key enabler for 3D high density application with top and bottom tier interconnection pitch below 10μm. Since 2015 hybrid bonding process robustness has been confirmed on complete electrical test vehicles [1,2] as well as commercial products [3] integrating copper to copper interconnection pitchs close to 6μm. To our knowledge, no results have been shown today demonstrating sub-1.5μm pitch copper hybrid bonding feasibility.
Keywords : Copper Bonding Surface topography Rough surfaces Surface roughness Surface treatment
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-02185349
Contributor : Marianne Leriche <>
Submitted on : Tuesday, July 16, 2019 - 3:36:40 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM

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A. Jouve, V. Balan, N. Bresson, C. Euvrard-Colnat, F. Fournel, et al.. 1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, Canada. pp.1-2, ⟨10.1109/S3S.2017.8309213⟩. ⟨cea-02185349⟩

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