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1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy

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N. Bresson
  • Function : Author

Abstract

Copper/oxide hybrid bonding process has been extensively studied these past years as a key enabler for 3D high density application with top and bottom tier interconnection pitch below 10μm. Since 2015 hybrid bonding process robustness has been confirmed on complete electrical test vehicles [1,2] as well as commercial products [3] integrating copper to copper interconnection pitchs close to 6μm. To our knowledge, no results have been shown today demonstrating sub-1.5μm pitch copper hybrid bonding feasibility.
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Dates and versions

cea-02185349 , version 1 (16-07-2019)

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Cite

A. Jouve, V. Balan, N. Bresson, C. Euvrard-Colnat, F. Fournel, et al.. 1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, Canada. pp.1-2, ⟨10.1109/S3S.2017.8309213⟩. ⟨cea-02185349⟩
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