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SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

Abstract : In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 degrees C-700 degrees C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.
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https://hal-cea.archives-ouvertes.fr/cea-02185214
Contributor : Marianne Leriche <>
Submitted on : Tuesday, July 16, 2019 - 2:54:37 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM

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M Mastari, M. Charles, Y. Bogumilowicz, M Thai, P. Pimenta-Barros, et al.. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars. Nanotechnology, Institute of Physics, 2018, 29 (27), pp.275702. ⟨10.1088/1361-6528/aabdca⟩. ⟨cea-02185214⟩

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