SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

M Mastari (1) , M. Charles (1) , Y. Bogumilowicz (1) , M Thai (1) , P. Pimenta-Barros (1) , M Argoud (1) , M Papon (1) , P. Gergaud (1) , D. Landru (2) , Y Kim (2) , M Hartmann (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 SOITEC SA

In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 degrees C-700 degrees C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

Keywords: nano-heteroepitaxy; reduced pressure-chemical vapour deposition; selective growth; patterned substrate; elastic relaxation; SiGe; crystal defects

Domains: Engineering Sciences [physics]

M Mastari, M. Charles, Y. Bogumilowicz, M Thai, P. Pimenta-Barros, et al.. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars. Nanotechnology, 2018, 29 (27), pp.275702. ⟨10.1088/1361-6528/aabdca⟩. ⟨cea-02185214⟩