Radio-Frequency Capacitive Gate-Based Sensing - Archive ouverte HAL Access content directly
Journal Articles Physical Review Applied Year : 2018

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Imtiaz Ahmed
• Function : Author
James A. Haigh
• Function : Author
Simon Schaal
• Function : Author
Alessandro Rossi
• Function : Author
• PersonId : 991512

#### Abstract

Developing fast, accurate, and scalable techniques for quantum-state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is placed in parallel with a superconducting spiral inductor resulting in resonators with loaded $Q$ factors in the 400-800 range. We utilize resonators operating at 330 and 616 MHz, and achieve charge sensitivities of 7.7 and 1.3 $\mu$e $\sqrt Hz$, respectively. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing on a par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum-state readout.

#### Domains

Engineering Sciences [physics]

### Dates and versions

cea-02184686 , version 1 (16-07-2019)

### Identifiers

• HAL Id : cea-02184686 , version 1
• DOI :

### Cite

Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, et al.. Radio-Frequency Capacitive Gate-Based Sensing. Physical Review Applied, 2018, 10, pp.0104018. ⟨10.1103/PhysRevApplied.10.014018⟩. ⟨cea-02184686⟩

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