Silicon nitride-on-silicon bi-layer grating couplers designed by a global optimization method - Archive ouverte HAL Access content directly
Journal Articles Optics Express Year : 2018

Silicon nitride-on-silicon bi-layer grating couplers designed by a global optimization method

(1) , (2) , (2) , (2) , (1)
1
2

Abstract

Silicon nitride-on-silicon bi-layer grating couplers were designed for the O-band using an optimization-based procedure that accounted for design rules and fabricated on a 200 mm wafer. The designs were sufficiently robust to fabrication variations to function well across the wafer. A peak fiber-to-chip coupling efficiency to standard single mode fiber of -2.2 dB and a 1-dB bandwidth of 72.9 nm was achieved in the representative device. Over several chips across the wafer, we measured a median peak coupling efficiency of -2.1 dB and median 1-dB bandwidth of 70.8 nm. The measurements had good correspondence with simulation.

Dates and versions

cea-02184493 , version 1 (16-07-2019)

Identifiers

Cite

Jason Mak, Quentin Wilmart, Ségolène Olivier, Sylvie Menezo, Joyce Poon. Silicon nitride-on-silicon bi-layer grating couplers designed by a global optimization method. Optics Express, 2018, 26 (10), pp.13656. ⟨10.1364/OE.26.013656⟩. ⟨cea-02184493⟩
16 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More