Silicon nitride-on-silicon bi-layer grating couplers designed by a global optimization method

Jason Mak 1 Quentin Wilmart 2 Ségolène Olivier 2 Sylvie Menezo 2 Joyce Poon 1
1 University of Toronto
2 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
Abstract : Silicon nitride-on-silicon bi-layer grating couplers were designed for the O-band using an optimization-based procedure that accounted for design rules and fabricated on a 200 mm wafer. The designs were sufficiently robust to fabrication variations to function well across the wafer. A peak fiber-to-chip coupling efficiency to standard single mode fiber of -2.2 dB and a 1-dB bandwidth of 72.9 nm was achieved in the representative device. Over several chips across the wafer, we measured a median peak coupling efficiency of -2.1 dB and median 1-dB bandwidth of 70.8 nm. The measurements had good correspondence with simulation.
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https://hal-cea.archives-ouvertes.fr/cea-02184493
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Submitted on : Tuesday, July 16, 2019 - 10:11:52 AM
Last modification on : Thursday, July 18, 2019 - 1:27:53 AM

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Jason Mak, Quentin Wilmart, Ségolène Olivier, Sylvie Menezo, Joyce Poon. Silicon nitride-on-silicon bi-layer grating couplers designed by a global optimization method. Optics Express, Optical Society of America, 2018, 26 (10), pp.13656. ⟨10.1364/OE.26.013656⟩. ⟨cea-02184493⟩

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