Crystal growth and doping control of HgBa2CuO4+δ, the model compound for high-T superconductors - Archive ouverte HAL Access content directly
Journal Articles Materials Research Bulletin Year : 2019

Crystal growth and doping control of HgBa2CuO4+δ, the model compound for high-T superconductors

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Abstract

A self-flux method to grow very high quality single crystals of the superconducting HgBa2CuO4+δ mercury cuprates is reported. The single crystals are platelet-shaped, with surfaces of high optical quality and good crystallographic properties. Annealing enables optimization of Tc up to Tc max = 94 K. With adequate treatment, the doping level of the crystalline samples can be finely controlled in a wide under-and over-doped range. Preliminary structural characterization from single crystal X-ray diffraction data is given for different doping levels. The signature of under-and over-doping for both pure and gold-substituted crystals has been identified from micro-Raman spectroscopy measurements.
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Dates and versions

cea-02145955 , version 1 (03-06-2019)

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A. Legros, B. Loret, A. Forget, P. Bonnaillie, G. Collin, et al.. Crystal growth and doping control of HgBa2CuO4+δ, the model compound for high-T superconductors. Materials Research Bulletin, 2019, 118, pp.110479. ⟨10.1016/j.materresbull.2019.05.004⟩. ⟨cea-02145955⟩
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