Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires - Archive ouverte HAL Access content directly
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Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires

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cea-02067075 , version 1 (14-03-2019)

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  • HAL Id : cea-02067075 , version 1

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Virginie Brouzet, Bassem Salem, Priyanka Periwal, Thierry Baron, Franck Bassani, et al.. Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires. 2014 E-MRS Fall Meeting: Symposium B: Materials for Optics and Optoelectronics, G. Ben Assayag, M. Perego and P. Pellegrino, Sep 2014, Warsaw, Poland. ⟨cea-02067075⟩
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