Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires

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https://hal-cea.archives-ouvertes.fr/cea-02067075
Contributor : Frédérique Ducroquet <>
Submitted on : Thursday, March 14, 2019 - 6:55:40 AM
Last modification on : Tuesday, November 5, 2019 - 2:32:14 PM

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  • HAL Id : cea-02067075, version 1

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Virginie Brouzet, Bassem Salem, Priyanka Periwal, Thierry Baron, Franck Bassani, et al.. Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires. 2014 E-MRS Fall Meeting: Symposium B: Materials for Optics and Optoelectronics, G. Ben Assayag, M. Perego and P. Pellegrino, Sep 2014, Warsaw, Poland. ⟨cea-02067075⟩

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