Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs

Virginie Brouzet 1, 2 Bassem Salem 1 Priyanka Periwal 1 Guillaume Rosaz 1 Thierry Baron 1 Franck Bassani 1 P. Gentile 3 Gérard Ghibaudo 2
1 LTM - Laboratoire des technologies de la microélectronique
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-02067074
Contributor : Frédérique Ducroquet <>
Submitted on : Thursday, March 14, 2019 - 6:43:57 AM
Last modification on : Tuesday, November 5, 2019 - 2:32:14 PM

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  • HAL Id : cea-02067074, version 1

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CNRS | INAC-SP2M | CEA | UNIV-SAVOIE | CEA-DRF | IMEP-LAHC | CMNE | LTM | IRIG | NANOMATERIALS | UGA | CEA-GRE

Citation

Virginie Brouzet, Bassem Salem, Priyanka Periwal, Guillaume Rosaz, Thierry Baron, et al.. Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs. 2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France. ⟨cea-02067074⟩

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