Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs

Virginie Brouzet (1, 2) , Bassem Salem (1) , Priyanka Periwal (1) , Guillaume Rosaz (1) , Thierry Baron (1) , Franck Bassani (1) , P. Gentile (3) , Gérard Ghibaudo (2)

1 LTM - Laboratoire des technologies de la microélectronique
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 SiNaps - Silicon Nanoelectronics Photonics and Structures

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Materials

Virginie Brouzet, Bassem Salem, Priyanka Periwal, Guillaume Rosaz, Thierry Baron, et al.. Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs. 2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France. ⟨cea-02067074⟩