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Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs

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Materials Science [cond-mat.mtrl-sci] Electric power Micro and nanotechnologies/Microelectronics Materials

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https://hal-cea.archives-ouvertes.fr/cea-02067074

Submitted on : Thursday, March 14, 2019-6:43:57 AM

Last modification on : Friday, March 24, 2023-2:53:10 PM

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cea-02067074 , version 1 (14-03-2019)

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  • HAL Id : cea-02067074 , version 1

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Virginie Brouzet, Bassem Salem, Priyanka Periwal, Guillaume Rosaz, Thierry Baron, et al.. Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs. 2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France. ⟨cea-02067074⟩

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CEA UNIV-SAVOIE UGA CNRS IMEP-LAHC LTM NANOMATERIALS INAC-SP2M CEA-DRF IRIG CEA-GRE
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