Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Electric power Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Materials

pascal gentile : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-01998244

Submitted on : Tuesday, January 29, 2019-3:04:32 PM

Last modification on : Wednesday, November 10, 2021-2:54:03 PM

Dates and versions

cea-01998244 , version 1 (29-01-2019)

Identifiers

HAL Id : cea-01998244 , version 1

Cite

Virginie Brouzet, Bassem Salem, Priyanka Periwal, Thierry Baron, Franck Bassani, et al.. Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration. 2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States. ⟨cea-01998244⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

CEA UNIV-SAVOIE UGA CNRS IMEP-LAHC LTM NANOMATERIALS INAC-SP2M CEA-DRF IRIG CEA-GRE PHELIQS

45 View

0 Download