Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration

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Submitted on : Tuesday, January 29, 2019 - 3:04:32 PM
Last modification on : Tuesday, November 5, 2019 - 2:32:14 PM

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  • HAL Id : cea-01998244, version 1

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Virginie Brouzet, Bassem Salem, Priyanka Periwal, Thierry Baron, Franck Bassani, et al.. Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration. 2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States. ⟨cea-01998244⟩

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