Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration

Virginie Brouzet 1 Bassem Salem 1 Priyanka Periwal 1 Thierry Baron 1 Franck Bassani 1 P. Gentile 2 Gérard Ghibaudo 3
1 LTM - Laboratoire des technologies de la microélectronique
2 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
3 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-01998244
Contributor : Pascal Gentile <>
Submitted on : Tuesday, January 29, 2019 - 3:04:32 PM
Last modification on : Tuesday, November 5, 2019 - 2:32:14 PM

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CEA | NANOMATERIALS | LTM | UGA | CNRS | INAC-SP2M | UNIV-SAVOIE | CEA-DRF | IMEP-LAHC | CMNE | IRIG | CEA-GRE

Citation

Virginie Brouzet, Bassem Salem, Priyanka Periwal, Thierry Baron, Franck Bassani, et al.. Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration. 2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States. ⟨cea-01998244⟩

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