Highly doped silicon nanowires based electrodes for micro-electrochemical capacitor applications

Fleur Thissandier (1) , Annaig Le Comte (2) , Olivier Crosnier (2) , Pascal Gentile (3) , Gerard Bidan (4) , Emmanuel Hadji (3) , Thierry Brousse (2) , Said Sadki (1)

1 SPRAM - UMR 5819 - Structures et propriétés d'architectures moléculaire
2 IMN - Institut des Matériaux Jean Rouxel
3 SiNaps - Silicon Nanoelectronics Photonics and Structures
4 SCIB - UMR E3 - Service de Chimie Inorganique et Biologique

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Physics [physics]; Physics [physics]; Optics [physics.optics]; Engineering Sciences [physics]; Electromagnetism; Engineering Sciences [physics]; Materials; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electronics

Fleur Thissandier, Annaig Le Comte, Olivier Crosnier, Pascal Gentile, Gerard Bidan, et al.. Highly doped silicon nanowires based electrodes for micro-electrochemical capacitor applications. Electrochemistry Communications, 2012, 25, pp.109-111. ⟨cea-01996784⟩