Nonlinear direct band gap and Raman shift strain dependence in germanium under high uniaxial stress

Kevin Guilloy (1) , Alban Gassenq (1) , Nicolas Pauc (1) , Samuel Tardif (2) , Francois Rieutord (2) , François Rieutord , J.M. Escalante (3) , Ivan Duchemin (4) , Y. M. Niquet (5) , P. Gentile (1) , Guilherme Osvaldo Dias (4) , D. Rouchon (4) , J. Widiez (4) , J.M. Hartmann (4) , Alexei Chelnokov (4) , Richard Geiger (6) , Thomas Zabel (6) , Hans Sigg (6) , Jerome Faist (7) , Vincent Reboud (4) , Vincent Calvo (1)

1 SiNaps - Silicon Nanoelectronics Photonics and Structures
2 NRS - Nanostructures et Rayonnement Synchrotron
3 NTC-UPV - Nanophotonics Technology Centre, Universidad Politecnica de Valencia
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
5 LSIM - Laboratory of Atomistic Simulation
6 PSI - Paul Scherrer Institute
7 ETH Zürich - Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich]

Domains: Materials Science [cond-mat.mtrl-sci]; Electric power; Micro and nanotechnologies/Microelectronics; Materials

Kevin Guilloy, Alban Gassenq, Nicolas Pauc, Samuel Tardif, Francois Rieutord, et al.. Nonlinear direct band gap and Raman shift strain dependence in germanium under high uniaxial stress. E-MRS spring meeting, May 2016, lille, France. ⟨cea-01994354⟩