Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2006

Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Electric power Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Materials

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Submitted on : Tuesday, January 22, 2019-3:51:16 PM

Last modification on : Sunday, January 15, 2023-5:06:12 PM

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cea-01989853 , version 1 (22-01-2019)

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  • HAL Id : cea-01989853 , version 1

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Romain Dujardin, V. Poydenot, T. Devillers, V. Favre-Nicolin, P. Gentile, et al.. Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations. Applied Physics Letters, 2006, 89 (15), pp.153129. ⟨cea-01989853⟩

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