Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

Romain Dujardin; V. Poydenot; T. Devillers; V. Favre-Nicolin; P. Gentile; A. Barski

Journal Articles Applied Physics Letters Year : 2006

Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

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Romain Dujardin

Function : Author

Silicon Nanoelectronics Photonics and Structures

V. Poydenot

Function : Author

Silicon Nanoelectronics Photonics and Structures

T. Devillers

Function : Author

V. Favre-Nicolin

Function : Author

Service de Physique des Matériaux et Microstructures

P. Gentile

Function : Author
PersonId : 170318
IdHAL : pascal-gentile
ORCID : 0000-0002-1547-4247
IdRef : 202987515

Silicon Nanoelectronics Photonics and Structures

A. Barski

Function : Author

Silicon Nanoelectronics Photonics and Structures

Domains

Materials Science [cond-mat.mtrl-sci] Electric power Micro and nanotechnologies/Microelectronics Materials

pascal gentile : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-01989853

Submitted on : Tuesday, January 22, 2019-3:51:16 PM

Last modification on : Monday, March 13, 2023-10:56:15 AM

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cea-01989853 , version 1 (22-01-2019)

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HAL Id : cea-01989853 , version 1

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Romain Dujardin, V. Poydenot, T. Devillers, V. Favre-Nicolin, P. Gentile, et al.. Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations. Applied Physics Letters, 2006, 89 (15), pp.153129. ⟨cea-01989853⟩

Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

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