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Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

Romain Dujardin 1 V. Poydenot 1 T. Devillers V. Favre-Nicolin 2 P. Gentile 1 A. Barski 1 
1 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
2 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
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https://hal-cea.archives-ouvertes.fr/cea-01989853
Contributor : pascal gentile Connect in order to contact the contributor
Submitted on : Tuesday, January 22, 2019 - 3:51:16 PM
Last modification on : Tuesday, May 11, 2021 - 11:36:12 AM

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  • HAL Id : cea-01989853, version 1

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CEA | INAC-SP2M | CEA-DRF | IRIG | CEA-GRE | PHELIQS

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Romain Dujardin, V. Poydenot, T. Devillers, V. Favre-Nicolin, P. Gentile, et al.. Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations. Applied Physics Letters, American Institute of Physics, 2006, 89 (15), pp.153129. ⟨cea-01989853⟩

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