The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

P. Noe (1, 2, 3) , H. Okuno (4) , J.-B. Jager (3, 5, 6) , E Delamadeleine (3) , O. Demichel (7) , J-L Rouvière , V. Calvo (3) , C. Maurizio (8) , F. D’acapito (8)

1 CERMAV - Centre de Recherches sur les Macromolécules Végétales
2 DPFT - Département Plate-Forme Technologique
3 SiNaps - Silicon Nanoelectronics Photonics and Structures
4 UCL PCPM - Unité de Physico-Chimie et de Physique des Matériaux
5 PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS
6 INAC - Institut Nanosciences et Cryogénie
7 ICB - Laboratoire Interdisciplinaire Carnot de Bourgogne
8 ESRF - European Synchrotron Radiation Facility

Domains: Materials Science [cond-mat.mtrl-sci]; Materials; Micro and nanotechnologies/Microelectronics; Optics / Photonic

P. Noe, H. Okuno, J.-B. Jager, E Delamadeleine, O. Demichel, et al.. The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films. Nanotechnology, 2009, 20 (35), pp.355704. ⟨cea-01989752⟩