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Ordering of Ge quantum dots with buried Si dislocation networks

F. Leroy 1 J. Eymery 2 P. Gentile 3 F. Fournel 4 
1 L'Oréal Recherche
2 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
3 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
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Submitted on : Tuesday, January 22, 2019 - 3:04:35 PM
Last modification on : Tuesday, May 11, 2021 - 11:36:12 AM

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  • HAL Id : cea-01989695, version 1

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CEA | INAC-SP2M | DRT | CEA-DRF | LETI | IRIG | CEA-GRE | PHELIQS

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F. Leroy, J. Eymery, P. Gentile, F. Fournel. Ordering of Ge quantum dots with buried Si dislocation networks. Applied Physics Letters, American Institute of Physics, 2002, 80 (17), pp.3078-3080. ⟨cea-01989695⟩

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