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Single-electron charging effect in individual Si nanocrystals

T. Baron 1 P. Gentile 2 N. Magnea 2 P. Mur 3 
1 LTM - Laboratoire des technologies de la microélectronique
2 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
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Submitted on : Tuesday, January 22, 2019 - 2:58:10 PM
Last modification on : Wednesday, November 10, 2021 - 2:54:03 PM

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  • HAL Id : cea-01989661, version 1

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CEA | UGA | CNRS | LTM | INAC-SP2M | DRT | CEA-DRF | LETI | IRIG | CEA-GRE | PHELIQS

Citation

T. Baron, P. Gentile, N. Magnea, P. Mur. Single-electron charging effect in individual Si nanocrystals. Applied Physics Letters, American Institute of Physics, 2001, 79 (8), pp.1175-1177. ⟨cea-01989661⟩

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