Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

C. Adelmann 1 J. Brault 1, 2 D. Jalabert 1 P. Gentile 3, 1 H. Mariette 1, 2 Guido Mula 4, 1 B. Daudin 1, *
* Corresponding author
1 DRFMC - Département de Recherche Fondamentale sur la Matière Condensée
2 LIPhy - Laboratoire Interdisciplinaire de Physique [Saint Martin d’Hères]
3 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
4 Universita degli Studi di Cagliari [Cagliari]
Abstract : The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.
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Submitted on : Tuesday, January 22, 2019 - 2:46:31 PM
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C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, et al.. Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Journal of Applied Physics, American Institute of Physics, 2002, 91 (12), pp.9638. ⟨cea-01989598⟩

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