Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

C. Adelmann (1) , J. Brault (1, 2) , D. Jalabert (1) , P. Gentile (3, 1) , H. Mariette (1, 2) , Guido Mula (4, 1) , B. Daudin (1)

1 DRFMC - Département de Recherche Fondamentale sur la Matière Condensée
2 LIPhy - Laboratoire Interdisciplinaire de Physique [Saint Martin d’Hères]
3 SiNaps - Silicon Nanoelectronics Photonics and Structures
4 UniCa - Università degli Studi di Cagliari = University of Cagliari

The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Energie électrique; Micro et nanotechnologies/Microélectronique; Matériaux

C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, et al.. Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Journal of Applied Physics, 2002, 91 (12), pp.9638. ⟨cea-01989598⟩