Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

C. Adelmann; J. Brault; D. Jalabert; P. Gentile; H. Mariette; Guido Mula; B. Daudin

Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

C. Adelmann ¹ J. Brault ^{1, 2} D. Jalabert ¹ P. Gentile ^{3, 1} H. Mariette ^{1, 2} Guido Mula ^{4, 1} B. Daudin ^{1, *}

* Corresponding author

1 DRFMC - Département de Recherche Fondamentale sur la Matière Condensée

2 LIPhy - Laboratoire Interdisciplinaire de Physique [Saint Martin d’Hères]

3 SiNaps - Silicon Nanoelectronics Photonics and Structures

PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/INAC/PHELIQS

4 Universita degli Studi di Cagliari [Cagliari]

Abstract : The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Engineering Sciences [physics] / Electric power

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Materials

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https://hal-cea.archives-ouvertes.fr/cea-01989598
Contributor : Pascal Gentile <>
Submitted on : Tuesday, January 22, 2019 - 2:46:31 PM
Last modification on : Wednesday, August 7, 2019 - 12:10:03 PM

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Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

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