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Journal articles
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
Abstract : The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.
https://hal-cea.archives-ouvertes.fr/cea-01989598
Contributor : pascal gentile Connect in order to contact the contributor
Submitted on : Tuesday, January 22, 2019 - 2:46:31 PM
Last modification on : Tuesday, October 19, 2021 - 11:06:49 PM
Contributor : pascal gentile Connect in order to contact the contributor
Submitted on : Tuesday, January 22, 2019 - 2:46:31 PM
Last modification on : Tuesday, October 19, 2021 - 11:06:49 PM
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preprintGaN2001.pdf
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