Fabrication and characterization of a germanium nanowire light emitting diode

Johannes Greil 1 Emmerich Bertagnolli 1 Bassem Salem 2, 3 Thierry Baron 3, 2 Pascal Gentile 4 Alois Lugstein 1, *
* Corresponding author
1 Vienna Univ Technol, Inst Solid State Elect, Floragasse 7, A-1040 Vienna, Austria
2 LTM - Laboratoire des technologies de la microélectronique
3 UGA - Université Grenoble Alpes
4 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
Abstract : In this letter we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.
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Johannes Greil, Emmerich Bertagnolli, Bassem Salem, Thierry Baron, Pascal Gentile, et al.. Fabrication and characterization of a germanium nanowire light emitting diode. Applied Physics Letters, American Institute of Physics, 2017, 111, pp.233103. ⟨10.1063/1.5006152⟩. ⟨cea-01988258⟩

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