 |
Journal articles
Fabrication and characterization of a germanium nanowire light emitting diode
Abstract : In this letter we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.
Cited literature [32 references]
https://hal-cea.archives-ouvertes.fr/cea-01988258
Contributor : Pascal Gentile Connect in order to contact the contributor
Submitted on : Monday, January 21, 2019 - 4:11:52 PM
Last modification on : Wednesday, November 10, 2021 - 2:54:03 PM
Contributor : Pascal Gentile Connect in order to contact the contributor
Submitted on : Monday, January 21, 2019 - 4:11:52 PM
Last modification on : Wednesday, November 10, 2021 - 2:54:03 PM
File
pdf_archiveAPPLABvol_111iss_23...
Files produced by the author(s)