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Conference papers
Performance and Transport Analysis of Vertically Stacked p-FET SOI Nanowires
Abstract : This work presents the performance and transport characteristics of vertically stacked p-MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. Electrical characterization is performed for NWs with [110] and [100] channel orientations, as a function of both fin width (W$_{FIN}$) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15nm gate length. Improved effective mobility is obtained for [110]-oriented NWs due to higher sidewall mobility contribution.
Cited literature [14 references]
https://hal-cea.archives-ouvertes.fr/cea-01974216
Contributor : Sylvain Barraud Connect in order to contact the contributor
Submitted on : Tuesday, January 8, 2019 - 4:25:21 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
Contributor : Sylvain Barraud Connect in order to contact the contributor
Submitted on : Tuesday, January 8, 2019 - 4:25:21 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
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9-Cardoso_ULIS_2017.pdf
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