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Performance and Transport Analysis of Vertically Stacked p-FET SOI Nanowires

Bruna Cardoso Paz 1, * Marcelo Pavanello 1 Mikael Casse 2 Sylvain Barraud 2 Gilles Reimbold 2 Maud Vinet 2 Olivier Faynot 2
* Corresponding author
1 Department of Electrical Engineering
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
Abstract : This work presents the performance and transport characteristics of vertically stacked p-MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. Electrical characterization is performed for NWs with [110] and [100] channel orientations, as a function of both fin width (W$_{FIN}$) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15nm gate length. Improved effective mobility is obtained for [110]-oriented NWs due to higher sidewall mobility contribution.
Keywords : performance SOI MOSFET channel orientation transport vertically stacked nanowire electrical characterization
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Submitted on : Tuesday, January 8, 2019 - 4:25:21 PM
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Bruna Cardoso Paz, Marcelo Pavanello, Mikael Casse, Sylvain Barraud, Gilles Reimbold, et al.. Performance and Transport Analysis of Vertically Stacked p-FET SOI Nanowires. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athènes, Greece. ⟨10.1109/ULIS.2017.7962606⟩. ⟨cea-01974216⟩

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