A simple interpolation model for the carrier mobility in Trigate and gate-all-around silicon NWFETs

Zaiping Zeng (1, 2) , Francois Triozon (3, 2) , Sylvain Barraud (3, 2) , Yann-Michel Niquet (1, 2)

1 LSIM - Laboratory of Atomistic Simulation
2 UGA [2016-2019] - Université Grenoble Alpes [2016-2019]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We compute the electron and hole mobilities in Trigate and gate-all-around silicon nanowires (SiNWs) within the nonequilibrium Green’s Function framework. We then derive a simple model for the dependence of the mobility on the SiNW width and height. This model interpolates between the square SiNW and thin film limits. In order to provide a complete description of the mobility in SiNW devices, we calculate the phonon, surface roughness, and remote Coulomb-limited mobilities of square nanowires and of thin films with side or thickness t = 5, 7, and 10 nm. The mobility of arbitrary rectangular SiNWs with width W = t or height H = t can then be reconstructed from these partial mobilities using Matthiessen’s rule. We show that these models successfully reproduce the trends measured on n- and p-type devices with different widths and orientations.

Keywords: Nanowire devices; Mobility; Index Terms-Green's functions

Domains: Physics [physics]; Physics [physics]; Condensed Matter [cond-mat]

Zaiping Zeng, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet. A simple interpolation model for the carrier mobility in Trigate and gate-all-around silicon NWFETs. IEEE Transactions on Electron Devices, 2017, 64 (6), pp.2485-2491. ⟨10.1109/TED.2017.2691406⟩. ⟨cea-01973715v2⟩