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Journal articles
A simple interpolation model for the carrier mobility in Trigate and gate-all-around silicon NWFETs
Abstract : We compute the electron and hole mobilities in Trigate and gate-all-around silicon nanowires (SiNWs)
within the nonequilibrium Green’s Function framework. We then derive a simple model for the dependence of
the mobility on the SiNW width and height. This model interpolates between the square SiNW and thin film limits.
In order to provide a complete description of the mobility in SiNW devices, we calculate the phonon, surface roughness,
and remote Coulomb-limited mobilities of square nanowires and of thin films with side or thickness t = 5, 7, and 10 nm.
The mobility of arbitrary rectangular SiNWs with width W = t or height H = t can then be reconstructed from these partial
mobilities using Matthiessen’s rule. We show that these models successfully reproduce the trends measured on
n- and p-type devices with different widths and orientations.
Cited literature [42 references]
https://hal-cea.archives-ouvertes.fr/cea-01973715
Contributor : Sylvain Barraud Connect in order to contact the contributor
Submitted on : Thursday, January 10, 2019 - 11:15:58 AM
Last modification on : Monday, June 14, 2021 - 10:24:38 AM
Contributor : Sylvain Barraud Connect in order to contact the contributor
Submitted on : Thursday, January 10, 2019 - 11:15:58 AM
Last modification on : Monday, June 14, 2021 - 10:24:38 AM
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Zeng_IEEE TED 2017.pdf
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