A simple interpolation model for the carrier mobility in Trigate and gate-all-around silicon NWFETs

Abstract : We compute the electron and hole mobilities in Trigate and gate-all-around silicon nanowires (SiNWs) within the nonequilibrium Green’s Function framework. We then derive a simple model for the dependence of the mobility on the SiNW width and height. This model interpolates between the square SiNW and thin film limits. In order to provide a complete description of the mobility in SiNW devices, we calculate the phonon, surface roughness, and remote Coulomb-limited mobilities of square nanowires and of thin films with side or thickness t = 5, 7, and 10 nm. The mobility of arbitrary rectangular SiNWs with width W = t or height H = t can then be reconstructed from these partial mobilities using Matthiessen’s rule. We show that these models successfully reproduce the trends measured on n- and p-type devices with different widths and orientations.
Document type :
Journal articles
Liste complète des métadonnées

https://hal-cea.archives-ouvertes.fr/cea-01973715
Contributor : Sylvain Barraud <>
Submitted on : Thursday, January 10, 2019 - 11:15:58 AM
Last modification on : Thursday, April 4, 2019 - 5:08:04 PM

File

Zeng_IEEE TED 2017.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

Zaiping Zeng, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet. A simple interpolation model for the carrier mobility in Trigate and gate-all-around silicon NWFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (6), pp.2485-2491. ⟨10.1109/TED.2017.2691406⟩. ⟨cea-01973715v2⟩

Share

Metrics

Record views

89

Files downloads

1170