P. Toniutti, P. Palestri, D. Esseni, F. Driussi, M. D. Michielis et al., On the origin of the mobility reduction in nand p-metaloxidesemiconductor field effect transistors with hafniumbased/metal gate stacks, J. Appl. Phys, vol.112, issue.3, p.34502, 2012.

V. H. Nguyen, Y. M. Niquet, F. Triozon, I. Duchemin, O. Nier et al., Quantum Modeling of the Carrier Mobility in FDSOI Devices, IEEE Transactions on Electron Devices, vol.61, issue.9, pp.3096-3102, 2014.
URL : https://hal.archives-ouvertes.fr/hal-02137701

H. F. Dadgour, K. Endo, V. K. De, and K. Banerjee, Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate TransistorsPart I: Modeling, Analysis, and Experimental Validation, IEEE Trans. Electron Devices, vol.57, issue.10, pp.2504-2514, 2010.

J. Wang, E. Polizzi, and M. Lundstrom, A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation, J. Appl. Phys, vol.96, issue.4, pp.2192-2203, 2004.

Y. Niquet, V. Nguyen, F. Triozon, I. Duchemin, O. Nier et al., Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches, J. Appl. Phys, vol.115, issue.5, p.54512, 2014.

L. Bourdet, J. Li, J. Pelloux-prayer, F. Triozon, M. Casse et al., Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach, J. Appl. Phys, vol.119, issue.8, p.84503, 2016.

A. Yagishita, T. Saito, K. Nakajima, S. Inumiya, K. Matsuo et al., Improvement of threshold voltage deviation in damascene metal gate transistors, IEEE Transactions on Electron Devices, vol.48, issue.8, pp.1604-1611, 2001.

H. Dadgour, V. De, and K. Banerjee, Statistical modeling of metalgate Work-Function Variability in emerging device technologies and implications for circuit design, Proc. of Int. Conf. on Computer Aided Design, pp.270-277, 2008.

A. R. Brown, J. R. Watling, and A. Asenov, Intrinsic parameter fluctuations due to random grain orientations in high-? gate stacks, J. Comput. Electron, vol.5, issue.4, pp.333-336, 2006.

S. Agarwal, R. K. Pandey, J. B. Johnson, A. Dixit, M. Bajaj et al., Ab initio Study of Metal Grain Orientation-Dependent Work Function and its Impact on FinFET Variability, IEEE Trans. Electron Devices, vol.60, issue.9, pp.2728-2733, 2013.

S. M. Nawaz, S. Dutta, A. Chattopadhyay, and A. Mallik, Comparison of Random Dopant and Gate-Metal Workfunction Variability Between Junctionless and Conventional FinFETs, IEEE Electron Device Lett, vol.35, issue.6, pp.663-665, 2014.

M. Bajaj, K. Nayak, S. Gundapaneni, and V. R. Rao, Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-AllAround Nanowire MOSFET 6-T SRAM Cell Stability, IEEE Trans. Nanotechnol, vol.15, issue.2, pp.243-247, 2016.

P. Toniutti, P. Palestri, D. Esseni, and L. Selmi, Revised analysis of the mobility and ion degradation in high-? gate stacks: Surface optical phonons vs

P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedolopez et al., Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning, Applied Physics Letters, vol.92, issue.9, p.92901, 2008.

Y. Niquet and C. Delerue, Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions, Phys. Rev. B, vol.84, p.75478, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00639883