Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayer

Abstract : In this work, we study growth and migration of atomic defects in MoSe 2 on graphene using multiple advanced transmission electron microscopy techniques to explore defect behavior in vdW heterostructures. A MoSe 2 /graphene vdW heterostructure is prepared by a direct growth of both monolayers, thereby attaining an ideal vdW interface between the monolayers. We investigate the intrinsic defects (inversion domains and grain boundaries) in synthesized MoSe 2 , their evolution amid growth processing steps, and their influence on the formation and movement of extrinsic defects. Electron diffraction identifies a preferential interlayer orientation of 2° between MoSe 2 and graphene, which is caused by the presence of intrinsic IBD defects. Extrinsic defects (point and line defects) are generated by in situ electron irradiation in the MoSe 2 layer. Our results shed light on how to independently modify the MoSe 2 atomic structure in vdW heterostructures for potential utilization in device processing.
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https://hal-cea.archives-ouvertes.fr/cea-01962213
Contributor : Alain Marty <>
Submitted on : Thursday, December 20, 2018 - 2:37:43 PM
Last modification on : Thursday, August 1, 2019 - 11:38:32 AM

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Carlos Alvarez, Minh Tuan Dau, Alain Marty, Céline Vergnaud, Hélène Le Poche, et al.. Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayer. Nanotechnology, Institute of Physics, 2018, 29 (42), pp.425706. ⟨10.1088/1361-6528/aad66f⟩. ⟨cea-01962213⟩

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