III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration - Archive ouverte HAL Access content directly
Journal Articles Nature Energy Year : 2018

III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

(1, 2) , (2) , (2) , (2) , (2) , (2) , , , (2) , (2) , , (2) , , (2) , (2)
1
2

Abstract

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III–V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III–V/Si solar cells. Here, we demonstrate a III–V/Si cell reaching similar performances to standard III–V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III–V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiO$_x$ passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.
Not file

Dates and versions

cea-01882171 , version 1 (26-09-2018)

Identifiers

Cite

Romain Cariou, Jan Benick, Frank Feldmann, Oliver Höhn, Hubert Hauser, et al.. III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration. Nature Energy, 2018, 3 (4), pp.326 - 333. ⟨10.1038/s41560-018-0125-0⟩. ⟨cea-01882171⟩
902 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More