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III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Abstract : Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III–V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III–V/Si solar cells. Here, we demonstrate a III–V/Si cell reaching similar performances to standard III–V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III–V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiO$_x$ passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.
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Submitted on : Wednesday, September 26, 2018 - 4:16:30 PM
Last modification on : Tuesday, January 4, 2022 - 4:47:38 AM




Romain Cariou, Jan Benick, Frank Feldmann, Oliver Höhn, Hubert Hauser, et al.. III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration. Nature Energy, Nature Publishing Group, 2018, 3 (4), pp.326 - 333. ⟨10.1038/s41560-018-0125-0⟩. ⟨cea-01882171⟩



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