Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Crystallography Year : 2016

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

Samuel Tardif
Jean-Sebastien Micha

Abstract

Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micrometre scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. The measurements were performed in a series of micro-devices under either uniaxial or biaxial stress and an excellent agreement with numerical simulations was found. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.

Dates and versions

cea-01851942 , version 1 (31-07-2018)

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Samuel Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, et al.. Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering. Journal of Applied Crystallography, 2016, 49 (5), pp.1402-1411. ⟨10.1107/s1600576716010347⟩. ⟨cea-01851942⟩
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