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Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

Abstract : Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micrometre scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. The measurements were performed in a series of micro-devices under either uniaxial or biaxial stress and an excellent agreement with numerical simulations was found. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.
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https://hal-cea.archives-ouvertes.fr/cea-01851942
Contributor : Jérôme Planès <>
Submitted on : Tuesday, July 31, 2018 - 12:06:04 PM
Last modification on : Tuesday, September 1, 2020 - 3:24:04 PM

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Samuel Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, et al.. Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering. Journal of Applied Crystallography, International Union of Crystallography, 2016, 49 (5), pp.1402-1411. ⟨10.1107/s1600576716010347⟩. ⟨cea-01851942⟩

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