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InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Abstract : The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nanocathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 degrees C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.
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Contributor : Jérôme Planès <>
Submitted on : Tuesday, July 31, 2018 - 12:05:47 PM
Last modification on : Wednesday, September 30, 2020 - 9:46:17 AM

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Xin Zhang, Hugo Lourenco-Martins, Sophie Meuret, Mathieu Kociak, Benedikt Haas, et al.. InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology, Institute of Physics, 2016, 27 (19), pp.195704. ⟨10.1088/0957-4484/27/19/195704⟩. ⟨cea-01851934⟩



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