InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Xin Zhang 1 Hugo Lourenco-Martins 2 Sophie Meuret 2 Mathieu Kociak 2 Benedikt Haas 3 Jean-Luc Rouviere 3 Pierre-Henri Jouneau 3 Catherine Bougerol 4 Thomas Auzelle 1 Denis Jalabert 3 Xavier Biquard 5 Bruno Gayral 1 Bruno Daudin 1
1 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
2 LPS - Laboratoire de Physique des Solides
3 LEMMA - Laboratoire d'Etude des Matériaux par Microscopie Avancée
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
4 NPSC - Nanophysique et Semiconducteurs
NEEL - Institut Néel
5 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
Abstract : The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nanocathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 degrees C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.
Keywords : Localization Nanowires InGaN Molecular Beam Epitaxy Nano-Cathodoluminescence Extended X-Ray Absorption Fine Structure Light-Emitting-Diodes
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Journal articles
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https://hal-cea.archives-ouvertes.fr/cea-01851934
Contributor : Jérôme Planès <>
Submitted on : Tuesday, July 31, 2018 - 12:05:47 PM
Last modification on : Tuesday, November 5, 2019 - 2:30:12 PM

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CEA | CNRS | INAC-SP2M | CEA-DRF | UNIV-PARIS-SACLAY | NEEL | IRIG | CEA-GRE | UGA

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Xin Zhang, Hugo Lourenco-Martins, Sophie Meuret, Mathieu Kociak, Benedikt Haas, et al.. InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology, Institute of Physics, 2016, 27 (19), pp.195704. ⟨10.1088/0957-4484/27/19/195704⟩. ⟨cea-01851934⟩

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