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Growth mechanism of InGaN nanoumbrellas

Xin Zhang 1 Benedikt Haas 2 Jean-Luc Rouviere 2 Eric Robin 2 Bruno Daudin 1 
1 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
2 LEMMA - Laboratoire d'Etude des Matériaux par Microscopie Avancée
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
Abstract : It is demonstrated that growing InGaN nanowires in metal-rich conditions on top of GaN nanowires results in a widening of the InGaN section. It is shown that the widening is eased by stacking faults. (SFs) formation, revealing facets favorable to In incorporation. It is furthermore put in evidence that partial dislocations terminating SFs efficiently contribute to elastic strain relaxation. Indium accumulation on top of the InGaN section is found to result in an axial growth rate decrease, which has been assigned to increased N-N recombination and subsequent effective nitrogen flux decrease, eventually leading to the formation of InGaN nano-umbrellas/nanoplatelets.
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Xin Zhang, Benedikt Haas, Jean-Luc Rouviere, Eric Robin, Bruno Daudin. Growth mechanism of InGaN nanoumbrellas. Nanotechnology, Institute of Physics, 2016, 27 (45), pp.455603. ⟨10.1088/0957-4484/27/45/455603⟩. ⟨cea-01851933⟩



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