Skip to Main content Skip to Navigation
Journal articles

Growth mechanism of InGaN nanoumbrellas

Xin Zhang 1 Benedikt Haas 2 Jean-Luc Rouviere 2 Eric Robin 2 Bruno Daudin 1
1 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
2 LEMMA [?-2019] - Laboratoire d'Etude des Matériaux par Microscopie Avancée [?-2019]
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
Abstract : It is demonstrated that growing InGaN nanowires in metal-rich conditions on top of GaN nanowires results in a widening of the InGaN section. It is shown that the widening is eased by stacking faults. (SFs) formation, revealing facets favorable to In incorporation. It is furthermore put in evidence that partial dislocations terminating SFs efficiently contribute to elastic strain relaxation. Indium accumulation on top of the InGaN section is found to result in an axial growth rate decrease, which has been assigned to increased N-N recombination and subsequent effective nitrogen flux decrease, eventually leading to the formation of InGaN nano-umbrellas/nanoplatelets.
Document type :
Journal articles
Complete list of metadatas

https://hal-cea.archives-ouvertes.fr/cea-01851933
Contributor : Jérôme Planès <>
Submitted on : Tuesday, July 31, 2018 - 12:05:45 PM
Last modification on : Tuesday, September 1, 2020 - 3:24:04 PM

Identifiers

Collections

Citation

Xin Zhang, Benedikt Haas, Jean-Luc Rouviere, Eric Robin, Bruno Daudin. Growth mechanism of InGaN nanoumbrellas. Nanotechnology, Institute of Physics, 2016, 27 (45), pp.455603. ⟨10.1088/0957-4484/27/45/455603⟩. ⟨cea-01851933⟩

Share

Metrics

Record views

286