Uniform phosphorus doping of untapered germanium nanowires

Kevin Guilloy (1) , Nicolas Pauc (1) , Pascal Gentile (1) , Eric Robin (2) , Vincent Calvo (1)

1 SiNaps - Silicon Nanoelectronics Photonics and Structures
2 LEMMA - Laboratoire d'Etude des Matériaux par Microscopie Avancée

One of the major challenges in the growth of vapor-liquid-solid (VLS) nanowires is the control of dopant incorporation in the structures. In this work, we study the n-type doping and morphology of nanowires grown by chemical vapor deposition when HCl is introduced. We obtain fully untapered nanowires with a growth temperature up to 410 degrees C and measure their resistivity using the 4-probe technique to be 2.0 m Omega cm. We perform energy dispersive x-ray measurements showing a concentration of dopants in the (5-7) x 10(18) cm(-3) range, being radially and axially uniform. The combination of these two measurements shows that the mobility is the same as for bulk germanium, demonstrating that the VLS mechanism has no detrimental effect for the electron transport in these nanowires.

Mots clés: Nanowire; Germanium; Phosphorus Doping; EDX; Field-Effect Transistors; Chemical-Vapor-Deposition; Silicon Nanowires; Solar-Cells

Domaines: Physique [physics]

Kevin Guilloy, Nicolas Pauc, Pascal Gentile, Eric Robin, Vincent Calvo. Uniform phosphorus doping of untapered germanium nanowires. Nanotechnology, 2016, 27 (48), pp.485701. ⟨10.1088/0957-4484/27/48/485701⟩. ⟨cea-01849854⟩