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Journal Articles Applied Physics Letters Year : 2016

Accurate strain measurements in highly strained Ge microbridges

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Samuel Tardif
Ivan Duchemin
R. Geiger

Abstract

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to epsilon(100) = 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9% corresponding to an unexpected Delta omega = 9.9 cm(-1) Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression. Published by AIP Publishing.

Dates and versions

cea-01849848 , version 1 (26-07-2018)

Identifiers

Cite

Alban Gassenq, Samuel Tardif, Kevin Guilloy, G. Osvaldo Dias, Nicolas Pauc, et al.. Accurate strain measurements in highly strained Ge microbridges. Applied Physics Letters, 2016, 108 (24), pp.241902. ⟨10.1063/1.4953788⟩. ⟨cea-01849848⟩
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