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Accurate strain measurements in highly strained Ge microbridges

Abstract : Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to epsilon(100) = 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9% corresponding to an unexpected Delta omega = 9.9 cm(-1) Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression. Published by AIP Publishing.
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Submitted on : Thursday, July 26, 2018 - 3:16:03 PM
Last modification on : Thursday, May 27, 2021 - 1:54:06 PM

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Alban Gassenq, Samuel Tardif, Kevin Guilloy, G. Osvaldo Dias, Nicolas Pauc, et al.. Accurate strain measurements in highly strained Ge microbridges. Applied Physics Letters, American Institute of Physics, 2016, 108 (24), pp.241902. ⟨10.1063/1.4953788⟩. ⟨cea-01849848⟩



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