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Journal Articles Journal of Applied Physics Year : 2016

Integrated experimental and computational approach for residual stress investigation near through-silicon vias

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Abstract

The performance of three-dimensional integrated circuits is decisively influenced by the thermomechanical behavior of through-silicon vias (TSVs), which are subjected to stresses formed during fabrication process as well as cyclic operation as a result of coefficients of thermal expansion (CTEs) mismatch between the silicon substrate, passivation layers, and metallic conduction paths. In this work, we adopted an integrated approach combining micro-Raman, wafer curvature experiments, and finite element (FE) modeling to study the triaxial residual stresses in silicon in the vicinity of W-coated hollow TSVs. A comparison of the experimental and calculated Raman shifts from a TSV cross section allowed a validation of the FE model, which was then extended to a non-sliced TSV. In the next step, the calculated bulk strains were compared with the ones measured using synchrotron X-ray micro-diffraction in order to specifically assess the stress decrease in Si as a function of the distance from the TSV wall within similar to 25 mu m. The experimental verification of the FE model demonstrates the importance of combined experimental-computational approaches to study stresses in micro-scale devices with complex morphology. Published by AIP Publishing.
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Dates and versions

cea-01849437 , version 1 (26-07-2018)

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Marco Deluca, Rene Hammer, Jozef Keckes, Jochen Kraft, Franz Schrank, et al.. Integrated experimental and computational approach for residual stress investigation near through-silicon vias. Journal of Applied Physics, 2016, 120 (19), pp.195104. ⟨10.1063/1.4967927⟩. ⟨cea-01849437⟩
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