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Integrated experimental and computational approach for residual stress investigation near through-silicon vias

Marco Deluca 1 Rene Hammer 1 Jozef Keckes 1 Jochen Kraft Franz Schrank Juraj Todt 1 Odile Robach 2 Jean-Sebastien Micha 3 Stefan Defregger 1
2 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
3 PCI - Polymères Conducteurs Ioniques
SYMMES - SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé : DRF/INAC/SYMMES
Abstract : The performance of three-dimensional integrated circuits is decisively influenced by the thermomechanical behavior of through-silicon vias (TSVs), which are subjected to stresses formed during fabrication process as well as cyclic operation as a result of coefficients of thermal expansion (CTEs) mismatch between the silicon substrate, passivation layers, and metallic conduction paths. In this work, we adopted an integrated approach combining micro-Raman, wafer curvature experiments, and finite element (FE) modeling to study the triaxial residual stresses in silicon in the vicinity of W-coated hollow TSVs. A comparison of the experimental and calculated Raman shifts from a TSV cross section allowed a validation of the FE model, which was then extended to a non-sliced TSV. In the next step, the calculated bulk strains were compared with the ones measured using synchrotron X-ray micro-diffraction in order to specifically assess the stress decrease in Si as a function of the distance from the TSV wall within similar to 25 mu m. The experimental verification of the FE model demonstrates the importance of combined experimental-computational approaches to study stresses in micro-scale devices with complex morphology. Published by AIP Publishing.
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Submitted on : Thursday, July 26, 2018 - 11:19:36 AM
Last modification on : Thursday, November 19, 2020 - 1:16:04 PM




Marco Deluca, Rene Hammer, Jozef Keckes, Jochen Kraft, Franz Schrank, et al.. Integrated experimental and computational approach for residual stress investigation near through-silicon vias. Journal of Applied Physics, American Institute of Physics, 2016, 120 (19), pp.195104. ⟨10.1063/1.4967927⟩. ⟨cea-01849437⟩



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